VDMOS Power Transistor Drain-Source Resistance Radiation Dependence
نویسندگان
چکیده
منابع مشابه
POWER SEMICONDUCTORS Design of a rugged 60 V VDMOS transistor
Vertical double diffused MOSFET (VDMOS) is an established technology for highcurrent power-switching applications such as automotive circuits. The most serious failure mode is destructive damage during inductive switching, resulting from avalanche breakdown of the forward-blocking junction in the presence of high current flow. Improving the ruggedness of the device is achieved by enhancing its ...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملA novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance
In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...
متن کاملa novel lightly doped drain and source carbon nanotube field effect transistor (cntfet) with negative differential resistance
in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...
متن کاملDesign of a rugged 60 V VDMOS transistor
Vertical Double Diffused MOSFET (VDMOS) is an established technology for high-current power switching applications such as automotive circuits. The most serious failure mode is destructive damage during inductive switching, resulting from avalanche breakdown of the forward blocking junction in the presence of high current flow. Improving the ruggedness of the device is achieved by enhancing its...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1981
ISSN: 0018-9499
DOI: 10.1109/tns.1981.4335729